NTHL080N120SC1
ONSEMI
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionMOSFET SIC MOS 80MW 1200V
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)31 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)6.5 pF
- DS Breakdown Voltage-Min1200 V
- Operating Temperature-Max175 Cel
- Operating Temperature-Min-55 Cel
- Power Dissipation-Max (Abs)178 W
- Transistor Element MaterialSILICON CARBIDE
- Avalanche Energy Rating (Eas)171 mJ
- Drain-source On Resistance-Max0.11 ohm
- Pulsed Drain Current-Max (IDM)132 A
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NTHL080N120SC1