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NTHC5513T1

ONSEMI

ONSEMI NTHC5513T1
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.29.00.95
  • SB Code
    8541.29.00.80
  • Application
    SWITCHING
  • JESD-30 Code
    R-XDSO-C8
  • Configuration
    N and P-Channel
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    C BEND
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • J-STD-609 Code
    e0
  • Operating Mode
    ENHANCEMENT MODE
  • Terminal Finish
    TIN LEAD
  • DLA Qualification
    Not Qualified
  • Terminal Position
    DUAL
  • Number of Elements
    2
  • Number of Terminals
    8
  • Package Body Material
    UNSPECIFIED
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Power Dissipation-Max (W)
    1.1
  • Drain Current-Max (ID) (A)
    3.1
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • DS Breakdown Voltage-Min (V)
    20
  • Peak Reflow Temperature (Cel)
    235
  • Operating Temperature-Max (Cel)
    150
  • Pulsed Drain Current-Max (IDM) (A)
    10
  • Drain-source On Resistance-Max (ohm)
    0.08

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NTHC5513T1