NTD2406-1G
ONSEMI
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 24A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)24
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Operating Temperature-Max (Cel)175
- Avalanche Energy Rating (Eas) (mJ)162
- Pulsed Drain Current-Max (IDM) (A)80
- Drain-source On Resistance-Max (ohm)0.042
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NTD2406-1G