NTC050N065SC1
ONSEMI
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 61.5A I(D), 650V, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XXUC-N3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionUNSPECIFIED
- Number of Elements1
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)325
- Drain Current-Max (ID) (A)61.5
- Transistor Element MaterialSILICON CARBIDE
- DS Breakdown Voltage-Min (V)650
- Feedback Cap-Max (Crss) (pF)14.43
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)373
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NTC050N065SC1