NTBG1000N170M1
ONSEMI
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionTrans MOSFET N-CH SiC 1.7KV 4.3A 8-Pin(7+Tab) D2PAK T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G7
- ConfigurationSingle
- JEDEC-95 CodeTO-263CB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals7
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)51
- Drain Current-Max (ID) (A)4.3
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON CARBIDE
- DS Breakdown Voltage-Min (V)1700
- Feedback Cap-Max (Crss) (pF)0.6
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)24
- Pulsed Drain Current-Max (IDM) (A)14.6
- Drain-source On Resistance-Max (ohm)1.43
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NTBG1000N170M1