NSVS1001SLT4G by ONSEMI | Sourcengine

ONSEMI NSVS1001SLT4G

Lifecycle status
Active-Unconfirmed
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Bipolar Transistor, 2.5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Category
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.8
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
100
Power Dissipation-Max (W)
18
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
2.5
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
100
Power Dissipation Ambient-Max (W)
1.2
Collector-base Capacitance-Max (pF)
27
Transition Frequency-Nom (fT) (MHz)
300
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED