NSVMUN5212DW1T1G
ONSEMI
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionTrans Digital BJT NPN 50V 100mA 385mW Automotive AEC-Q101 6-Pin SC-88 T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- J-STD-609 Codee3
- Terminal FinishMatte Tin (Sn) - annealed
- Number of Elements2
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)60
- Power Dissipation-Max (W)0.256
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Collector Current-Max (IC) (A)0.1
- Time@Peak Reflow Temperature-Max (s)30
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NSVMUN5212DW1T1G