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NSVMUN5113DW1T3G

ONSEMI

ONSEMI NSVMUN5113DW1T3G
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Surface Mount
    YES
  • J-STD-609 Code
    e3
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Number of Elements
    2
  • Polarity/Channel Type
    PNP
  • DC Current Gain-Min (hFE)
    80
  • Power Dissipation-Max (W)
    0.385
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    260
  • Collector Current-Max (IC) (A)
    0.1
  • Time@Peak Reflow Temperature-Max (s)
    30

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NSVMUN5113DW1T3G
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NSVMUN5113DW1T3G