NSVBCH817-16LT1G
ONSEMI
- Lifecycle statusActive-Unconfirmed
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-236
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- VCEsat-Max (V)0.7
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)100
- Power Dissipation-Max (W)0.3
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.5
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Collector-emitter Voltage-Max (V)45
- Transition Frequency-Nom (fT) (MHz)100
- Screening Level / Reference StandardAEC-Q101
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NSVBCH817-16LT1G
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NSVBCH817-16LT1G