NSTB1002DXV5T1G
ONSEMI
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionTrans Digital BJT NPN/PNP 50V 100mA/200mA 500mW 5-Pin SOT-553 T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-F5
- ConfigurationCASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- J-STD-609 Codee3
- Terminal FinishMatte Tin (Sn) - annealed
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- Number of Elements2
- Number of Terminals5
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN AND PNP
- DC Current Gain-Min (hFE)30
- Power Dissipation-Max (W)0.5
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)70
- Peak Reflow Temperature (Cel)260
- Turn-off Time-Max (toff) (ns)300
- Collector Current-Max (IC) (A)0.1
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)50
- Transition Frequency-Nom (fT) (MHz)250
- Time@Peak Reflow Temperature-Max (s)30
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NSTB1002DXV5T1G