NSB1706DMW5T1G
ONSEMI
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionTrans Digital BJT NPN 50V 0.1A 385mW 5-Pin SC-88A T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G5
- ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee3
- Terminal FinishMatte Tin (Sn) - annealed
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureBUILT-IN BIAS RESISTOR
- Number of Elements2
- Number of Terminals5
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)80
- Power Dissipation-Max (W)0.385
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Collector Current-Max (IC) (A)0.1
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)50
- Time@Peak Reflow Temperature-Max (s)30
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NSB1706DMW5T1G