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NSB13211DW6T1G

ONSEMI

ONSEMI NSB13211DW6T1G
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-PDSO-G6
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • JESD-609 Code
    e3
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Terminal Finish
    TIN
  • Terminal Position
    DUAL
  • Additional Feature
    BUILT IN BIAS RESISTANCE RATIO IS 1
  • Number of Elements
    2
  • Number of Terminals
    6
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    NPN AND PNP
  • Transistor Application
    SWITCHING
  • DC Current Gain-Min (hFE)
    35
  • Collector Current-Max (IC)
    0.1 A
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • Collector-emitter Voltage-Max
    50 V
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30

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NSB13211DW6T1G
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NSB13211DW6T1G