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NGTB10N60R2DT4G

ONSEMI

ONSEMI NGTB10N60R2DT4G
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    GENERAL PURPOSE
  • JESD-30 Code
    R-PSSO-G2
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • J-STD-609 Code
    e3
  • VCEsat-Max (V)
    2.3
  • Case Connection
    COLLECTOR
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    2
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (W)
    72
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • Turn-on Time-Nom (ton) (ns)
    188
  • Gate-emitter Voltage-Max (V)
    20
  • Peak Reflow Temperature (Cel)
    260
  • Turn-off Time-Nom (toff) (ns)
    220
  • Collector Current-Max (IC) (A)
    20
  • Operating Temperature-Max (Cel)
    175
  • Gate-emitter Thr Voltage-Max (V)
    7
  • Collector-emitter Voltage-Max (V)
    600
  • Time@Peak Reflow Temperature-Max (s)
    30

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NGTB10N60R2DT4G
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NGTB10N60R2DT4G