NGD8201BNT4G by ONSEMI | Sourcengine

ONSEMI NGD8201BNT4G

Lifecycle status
EOL
RoHS
RoHS compliant
Description
Insulated Gate Bipolar Transistor, 15A I(C), 430V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
YES
J-STD-609 Code
e3
Terminal Finish
Matte Tin (Sn) - annealed
Fall Time-Max (ns)
15000
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
7000
Power Dissipation-Max (W)
115
Moisture Sensitivity Level
1
Gate-emitter Voltage-Max (V)
18
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
15
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
1.8
Collector-emitter Voltage-Max (V)
430
Time@Peak Reflow Temperature-Max (s)
30