NGD18N40CLBT4G by ONSEMI | Sourcengine

ONSEMI NGD18N40CLBT4G

Lifecycle status
Transferred
RoHS
RoHS compliant
Description
Insulated Gate Bipolar Transistor, 15A I(C), 430V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AUTOMOTIVE IGNITION
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Fall Time-Max (ns)
15000
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
7000
Power Dissipation-Max (W)
115
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
5200
Gate-emitter Voltage-Max (V)
18
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
13000
Collector Current-Max (IC) (A)
15
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
1.9
Collector-emitter Voltage-Max (V)
430