NGD18N40ACLBT4G
ONSEMI
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 15A I(C), 430V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- J-STD-609 Codee3
- Terminal FinishMATTE TIN
- Fall Time-Max (ns)15000
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)7000
- Power Dissipation-Max (W)115
- Moisture Sensitivity Level1
- Gate-emitter Voltage-Max (V)18
- Peak Reflow Temperature (Cel)260
- Collector Current-Max (IC) (A)15
- Operating Temperature-Max (Cel)175
- Gate-emitter Thr Voltage-Max (V)2.1
- Collector-emitter Voltage-Max (V)430
- Time@Peak Reflow Temperature-Max (s)30
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NGD18N40ACLBT4G
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NGD18N40ACLBT4G