NGB8202ANTF4G
ONSEMI
- Lifecycle statusTransferred
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 20A I(C), 440V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- VCEsat-Max (V)1.9
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Fall Time-Max (ns)14000
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)7000
- Power Dissipation-Max (W)150
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)9000
- Turn-on Time-Nom (ton) (ns)6500
- Gate-emitter Voltage-Max (V)15
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Max (toff) (ns)24000
- Turn-off Time-Nom (toff) (ns)18500
- Collector Current-Max (IC) (A)20
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Gate-emitter Thr Voltage-Max (V)2.1
- Collector-emitter Voltage-Max (V)440
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NGB8202ANTF4G