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MUN5212DW1T1

ONSEMI

MUN5212DW1T1 Datasheet
ONSEMI MUN5212DW1T1
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.21.00.95
  • SB Code
    8541.21.00.80
  • Application
    SWITCHING
  • JESD-30 Code
    R-PDSO-G6
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • J-STD-609 Code
    e0
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Terminal Position
    DUAL
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO IS 1
  • Number of Elements
    2
  • Number of Terminals
    6
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    NPN
  • DC Current Gain-Min (hFE)
    60
  • Power Dissipation-Max (W)
    0.15
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    235
  • Collector Current-Max (IC) (A)
    0.1
  • Collector-emitter Voltage-Max (V)
    50

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MUN5212DW1T1