MTY55N20E by ONSEMI | Sourcengine

ONSEMI MTY55N20E

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 55A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-264AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
300
Drain Current-Max (ID) (A)
55
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Peak Reflow Temperature (Cel)
235
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
3000
Pulsed Drain Current-Max (IDM) (A)
165
Drain-source On Resistance-Max (ohm)
0.028
Time@Peak Reflow Temperature-Max (s)
30