MTB10N40E
ONSEMI
- Lifecycle statusActive
- DescriptionTrans MOSFET N-CH Si 400V 10A 3-Pin(2+Tab) D2PAK Rail
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)125
- Drain Current-Max (ID) (A)10
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)400
- Peak Reflow Temperature (Cel)235
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)520
- Pulsed Drain Current-Max (IDM) (A)40
- Drain-source On Resistance-Max (ohm)0.55
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MTB10N40E