MT6L61AS
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.025A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-F6
- ConfigurationSEPARATE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- J-STD-609 Codee0
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)70
- Power Dissipation-Max (W)0.15
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.025
- Operating Temperature-Max (Cel)125
- Collector-emitter Voltage-Max (V)5
- Collector-base Capacitance-Max (pF)0.85
- Transition Frequency-Nom (fT) (MHz)12000
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MT6L61AS