MT4S200T
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandC BAND
- Transistor ApplicationAMPLIFIER
- Collector Current-Max (IC)0.035 A
- Transistor Element MaterialSILICON GERMANIUM
- Collector-emitter Voltage-Max4 V
- Transition Frequency-Nom (fT)30000 MHz
- Collector-base Capacitance-Max0.5 pF
0 suppliers available to buy or to bid for MT4S200T
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MT4S200T
Send an RFQ
MT4S200T