MT4S102T
Toshiba Corporation
- Lifecycle statusEOL
- DescriptionRF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, KA Band, Silicon Germanium, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F4
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandKA BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)200
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.02 A
- Power Dissipation-Max (Abs)0.06 W
- Transistor Element MaterialSILICON GERMANIUM
- Collector-emitter Voltage-Max3 V
- Transition Frequency-Nom (fT)25000 MHz
- Collector-base Capacitance-Max0.8 pF
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MT4S102T
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MT4S102T