MT3S46T
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F3
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)70
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.04 A
- Power Dissipation-Max (Abs)0.1 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max4.5 V
- Transition Frequency-Nom (fT)16000 MHz
- Collector-base Capacitance-Max1.2 pF
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MT3S46T