MT3S16T
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F3
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Operating Temperature-Max125 Cel
- Collector Current-Max (IC)0.06 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max5 V
- Transition Frequency-Nom (fT)4000 MHz
- Collector-base Capacitance-Max3 pF
0 suppliers available to buy or to bid for MT3S16T
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MT3S16T
Send an RFQ
MT3S16T