MT3S03AU
Toshiba Corporation
- Lifecycle statusActive
- DescriptionRF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandL BAND
- DC Current Gain-Min (hFE)80
- Power Dissipation-Max (W)0.1
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.04
- Operating Temperature-Max (Cel)125
- Collector-emitter Voltage-Max (V)5
- Collector-base Capacitance-Max (pF)1.1
- Transition Frequency-Nom (fT) (MHz)10000
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MT3S03AU