MPS2907ATPE1
Toshiba Corporation
- Lifecycle statusActive
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, PNP, TO-92
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeO-PBCY-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-92
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- VCEsat-Max (V)1.6
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)50
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)45
- Turn-off Time-Max (toff) (ns)100
- Collector Current-Max (IC) (A)0.6
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)60
- Power Dissipation Ambient-Max (W)1.5
- Collector-base Capacitance-Max (pF)8
- Transition Frequency-Nom (fT) (MHz)200
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MPS2907ATPE1