MP6403
Toshiba Corporation
- Lifecycle statusActive-Unconfirmed
- DescriptionPower Field-Effect Transistor, 5A I(D), 60V, 0.2ohm, 6-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSIP-T12
- ConfigurationCOMPLEX
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements6
- Number of Terminals12
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Drain Current-Max (ID)5 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min60 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)240
- Power Dissipation Ambient-Max36 W
- Drain-source On Resistance-Max0.2 ohm
- Pulsed Drain Current-Max (IDM)20 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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MP6403