MP6101
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 10A I(D), 250V, 0.35ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSFM-T14
- ConfigurationCOMPLEX
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionSINGLE
- Number of Elements6
- Number of Terminals14
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)10 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min250 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max120 W
- Drain-source On Resistance-Max0.35 ohm
- Pulsed Drain Current-Max (IDM)20 A
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MP6101