MP4203
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 5A I(D), 60V, 0.8ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T10
- Configuration2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionSINGLE
- Number of Elements4
- Number of Terminals10
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)5 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min60 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)4 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.8 ohm
- Pulsed Drain Current-Max (IDM)10 A
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MP4203
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MP4203