MMG05N60D
ONSEMI
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 0.5A I(C), 600V V(BR)CES, N-Channel, TO-261A
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-261A
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureHIGH SPEED
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1
- Transistor Element MaterialSILICON
- Gate-emitter Voltage-Max (V)15
- Turn-off Time-Nom (toff) (ns)301
- Collector Current-Max (IC) (A)0.5
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)6
- Collector-emitter Voltage-Max (V)600
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MMG05N60D