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MMBTH10LT1

ONSEMI

MMBTH10LT1 Datasheet
ONSEMI MMBTH10LT1
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    AMPLIFIER
  • JESD-30 Code
    R-PDSO-G3
  • Configuration
    SINGLE
  • JEDEC-95 Code
    TO-236AB
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • J-STD-609 Code
    e0
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    NPN
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
  • DC Current Gain-Min (hFE)
    60
  • Power Dissipation-Max (W)
    0.225
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    235
  • Collector Current-Max (IC) (A)
    0.025
  • Operating Temperature-Max (Cel)
    150
  • Collector-emitter Voltage-Max (V)
    25
  • Collector-base Capacitance-Max (pF)
    0.7
  • Transition Frequency-Nom (fT) (MHz)
    650
  • Time@Peak Reflow Temperature-Max (s)
    30

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MMBTH10LT1