MMBT4355
ONSEMI
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max1 V
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-236AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)100 ns
- Turn-off Time-Max (toff)400 ns
- DC Current Gain-Min (hFE)75
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Collector Current-Max (IC)0.8 A
- Power Dissipation-Max (Abs)0.35 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max60 V
- Collector-base Capacitance-Max30 pF
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MMBT4355
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MMBT4355