MJD117RLG
ONSEMI
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionDarlington Transistors BIP DPAK PNP 2A 100V TR
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee3
- Case ConnectionCOLLECTOR
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)200
- Power Dissipation-Max (W)20
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Collector Current-Max (IC) (A)2
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)100
- Transition Frequency-Nom (fT) (MHz)25
- Time@Peak Reflow Temperature-Max (s)30
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MJD117RLG