MIG30J951H
Toshiba Corporation
- Lifecycle statusActive
- DescriptionInsulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max (V)4
- Number of Elements1
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)30
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)600
0 suppliers available to buy or to bid for MIG30J951H
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MIG30J951H
Send an RFQ
MIG30J951H