MIG30J901H
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PUFM-D12
- ConfigurationCOMPLEX
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- Terminal PositionUPPER
- Additional Feature3PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE
- Number of Elements7
- Number of Terminals12
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Collector Current-Max (IC)30 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
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MIG30J901H