MIG20J902H
Toshiba Corporation
- Lifecycle statusActive
- DescriptionInsulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max (V)4
- Number of Elements1
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)20
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)600
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MIG20J902H
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MIG20J902H