MIG20J806HA
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.7 V
- JESD-30 CodeR-XUFM-P24
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals24
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)25 A
- Power Dissipation-Max (Abs)90 W
- Collector-emitter Voltage-Max600 V
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MIG20J806HA