MIG10J855
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.8 V
- JESD-30 CodeR-XDIP-T20
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals20
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)10 A
- Power Dissipation-Max (Abs)40 W
- Collector-emitter Voltage-Max600 V
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MIG10J855