MG8N6ES42
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Number of Elements6
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Collector Current-Max (IC)8 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1000 V
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MG8N6ES42