MG75H2YS1 by Toshiba Corporation | Sourcengine

Toshiba Corporation MG75H2YS1

Lifecycle status
Discontinued
Description
Insulated Gate Bipolar Transistor, 75A I(C), 500V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
5
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
HIGH SPEED
Number of Elements
2
Number of Terminals
7
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
350
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
700
Turn-off Time-Nom (toff) (ns)
800
Collector Current-Max (IC) (A)
75
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
500