MG400J1US46
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Elements1
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Collector Current-Max (IC)400 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
0 suppliers available to buy or to bid for MG400J1US46
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MG400J1US46
Send an RFQ
MG400J1US46