MG400J1US1 by Toshiba Corporation | Sourcengine

Toshiba Corporation MG400J1US1

Lifecycle status
Discontinued
Description
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
400
Turn-off Time-Nom (toff) (ns)
500
Collector Current-Max (IC) (A)
400
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
600