MG30J6ES50
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationMOTOR CONTROL
- JESD-30 CodeR-XUFM-D21
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- VCEsat-Max (V)2.7
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureHIGH SPEED
- Fall Time-Max (ns)360
- Number of Elements6
- Number of Terminals21
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)100
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)500
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Nom (toff) (ns)550
- Collector Current-Max (IC) (A)30
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)8
- Collector-emitter Voltage-Max (V)600
- Power Dissipation Ambient-Max (W)100
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
0 suppliers available to buy or to bid for MG30J6ES50
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MG30J6ES50