MG300Q2YS9
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Number of Elements2
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Collector Current-Max (IC)300 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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MG300Q2YS9