MG25Q6ES50
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max3.2 V
- JESD-30 CodeR-XDFM-P17
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals17
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)35 A
- Power Dissipation-Max (Abs)200 W
- Collector-emitter Voltage-Max1200 V
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MG25Q6ES50
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MG25Q6ES50