MG1800V1US51
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 1800A I(C), 1700V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUFM-X7
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max125 Cel
- Collector Current-Max (IC)1800 A
- Power Dissipation-Max (Abs)8300 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1700 V
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MG1800V1US51