MG15J6ES40
Toshiba Corporation
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max3.5 V
- JESD-30 CodeR-PUFM-D13
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- Terminal PositionUPPER
- Additional FeatureHIGH SPEED
- Number of Elements6
- Number of Terminals13
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)400 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)600 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)15 A
- Power Dissipation-Max (Abs)80 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
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MG15J6ES40