MG100Q1ZS50 by Toshiba Corporation | Sourcengine

Toshiba Corporation MG100Q1ZS50

Lifecycle status
Discontinued
Description
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
3.6 V
JESD-30 Code
R-XUFM-X5
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
5
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
150 A
Power Dissipation-Max (Abs)
660 W
Collector-emitter Voltage-Max
1200 V