MG100J2YS50
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationMOTOR CONTROL
- JESD-30 CodeR-XUFM-X7
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)2.7
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureHIGH SPEED
- Fall Time-Max (ns)300
- Number of Elements2
- Number of Terminals7
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)240
- Power Dissipation-Max (W)450
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)400
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)500
- Collector Current-Max (IC) (A)100
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)8
- Collector-emitter Voltage-Max (V)600
- Power Dissipation Ambient-Max (W)450
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MG100J2YS50